released process TQTRX gaas mesfet foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 1 of 7; rev 1.0 11/15/01 TQTRX process cross-section production process tqtrp advanced passives & mesfet foundry service features ? high density interconnects: ? 3 global ? 1 local ? 9 m total thickness ? high-q passives; >50 @ 2 ghz ? 0.6 m gate length mesfet op- tional: power & general purpose d-fets; e-fet ? schottky-barrier diodes ? bulk & thin film resistors ? high value capacitors ? dielectric encapsulated metals ? planarized surface; simplified plastic packaging ? substrate vias available ? volume production processes ? low cost passives-only option applications ? active and/or passive components ? circuits requiring high q passive elements ? ideal for mixers, converters, and phase-shifters with baluns, trans- formers, e-m structures ? mobile phone front end blocks ? rf module front-ends general description triquint?s tqtrp process has advanced metal systems and mesfet devices. it is targeted at high performance, small size passive-only or passive/active circuits and utilizes over 9 m of gold metal. high density interconnections are accomplished with three thick global and one surface metal interconnect lay- ers. the four metal layers are encapsulated in a high perform- ance dielectric that allows wiring flexibility and plastic packag- ing simplicity. precision nicr resistors, implanted resistors, and high value mim capacitors are included. advanced 0.6 m enhancement/depletion mode mesfet devices include an inte- grated power mesfet, general purpose d-mode mesfet, and enhancement mode mesfet and are based on the TQTRX process, currently triquint?s highest volume process. the tqtrp process is available on 150-mm (6 inch) wafers. semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 1 of 6; rev 2.1 8/10/02 tqtrp process cross-section e,d,g mesfet nicr resistor mim capacitor isolation implant semi-insulating gaas substrate mim metal n+ metal 0 metal 1 metal 1 metal 1 - 2 um n+ passivation via metal 2 metal 3 dielectric dielectric metal 3 - 5 um metal 2 - 2 um dielectric n-/p- channel nicr e,d,g mesfet nicr resistor mim capacitor isolation implant semi-insulating gaas substrate mim metal n+ metal 0 metal 1 metal 1 metal 1 - 2 um n+ passivation via metal 2 metal 3 dielectric dielectric metal 3 - 5 um metal 2 - 2 um e,d,g mesfet nicr resistor mim capacitor isolation implant semi-insulating gaas substrate mim metal n+ metal 0 metal 1 metal 1 metal 1 - 2 um n+ passivation via metal 2 metal 3 dielectric dielectric metal 3 - 5 um metal 2 - 2 um dielectric n-/p- channel nicr
released process TQTRX mesfet foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 2 of 7; rev 1.0 11/15/01 specifications subject to change fet operating channel temp -55 to +150 c capacitor breakdown voltage - design 10 v - typical 20 v maximum ratings production process tqtrp advanced passives & mesfet foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 2 of 6; rev 2.1 8/10/02 element parameter value units interconnects metal layers four: 0.5,2,2,5 um mim caps values 1200 pf/mm2 resistors nicr 50 ohms/sq bulk 700 ohms/sq gate length (all fets) 0.6 um e-fet; threshold voltage +0.15 vth?v imax 90 ma/mm ft @ idss 18 ghz gm 225 ms/mm breakdown, vgd 22 v fmin, 6 ghz 0.90 db d-fet pinchoff voltage -0.6 vp?v idss 70 ma/mm gm 200 ms/mm breakdown, vgd 18.5 v fmin, 6 ghz 0.54 db g-fet pinchoff voltage -2.2 vp?v idss 270 ma/mm imax 365 ma/mm gm 170 ms/mm breakdown, vgd 19 v vias yes mask layers no vias 18 with vias 20 n+ diode vforward 0.55 v tqtrp process details
production process tqtrp advanced passives & mesfet foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 3 of 6; rev 2.1 8/10/02 freq (0.1ghz to 26.1ghz) s12 / .05 -6 -4 -2 0 2 4 6 s21 s11 s22 efet 300 um vds=3v 50% idmax freq (0.1ghz to 26.1ghz) s12 / .05 -4 -3 -2 -1 0 1 2 3 4 s21 s11 s22 dfet 300 um vds=3v 50% idss freq (0.1ghz to 26.1ghz) s12 / .05 -4 -3 -2 -1 0 1 2 3 4 s21 s11 s22 gfet 300 um vds=3v 50% idss
production process tqtrp advanced passives & mesfet foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 4 of 6; rev 2.1 8/10/02 gmax vs vgs vs frequency 300 um fets; three types vds = 1.5 & 3.0 v; t=27c efet ft vs vgs 0.00 5.00 10.00 15.00 20.00 0 . 2 0 0 . 3 0 0 . 4 0 0 . 5 0 0 . 6 0 vgs (v) ft (ghz) vds = 1.5v vds = 3.0 v dfet ft vs vgs 10.0 13.0 16.0 19.0 22.0 25.0 - 0 . 4 0 - 0 . 2 0 0 . 0 0 0 . 2 0 0 . 4 0 vgs (v) ft (ghz) vds = 1.5v vds = 3.0 v gfet ft vs vgs 15.0 17.0 19.0 21.0 23.0 25.0 -1.6 0 -1.40 -1.20 - 1 .00 -0.80 - 0.6 0 -0.40 -0.20 0 . 00 0. 20 vgs (v) ft (ghz) vds = 1.5v vds = 3.0v ft versus vgs; 300 um fets; three types; vds = 1.5 & 3.0 v; t=27c dfet gmax vs vgs vs freq 6.0 10.0 14.0 18.0 22.0 26.0 -0. 4 - 0 . 2 0. 0 0. 2 0. 4 vgs (v) gmax (db) vds = 1.5v @ 1.1ghz vds = 1.5v @ 2.2ghz vds = 1.5v @ 5.8ghz vds = 1.5v @ 7.9ghz vds = 1.5v @ 12.1ghz vds = 3.0v @ 1.1ghz vds = 3.0v @ 2.2ghz vds = 3.0v @ 5.8ghz vds = 3.0v @ 7.9ghz vds = 3.0v @ 12.1ghz gfet gm ax vs vgs vs freq 6.0 10.0 14.0 18.0 22.0 26.0 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 vgs (v) gmax (db) vds = 1.5v @ 1.1ghz vds = 1.5v @ 2.2ghz vds = 1.5v @ 5.8ghz vds = 1.5v @ 7.9ghz vds = 1.5v @ 12.1ghz vds = 3.0v @ 1.1ghz vds = 3.0v @ 2.2ghz vds = 3.0v @ 5.8ghz vds = 3.0v @ 7.9ghz vds = 3.0v @ 12.1ghz efet gmax vs vgs vs freq. 4.0 8.0 12.0 16.0 20.0 24.0 0 . 2 0 . 3 0.4 0.5 0 .6 vgs (v) gmax (db) vds = 1.5v @ 1.1ghz vds + 1.5v @ 2.2ghz vds + 1.5v @ 5.8ghz vds = 1.5v @ 7.9ghz vds = 1.5v @ 12.1ghz vds = 3.0v @ 1.1ghz vds = 3.0v @ 2.2ghz vds = 3.0v @ 5.8ghz vds = 3.0v @ 7.9ghz vds = 3.0v @ 12.1ghz
production process tqtrp advanced passives & mesfet foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 5 of 6; rev 2.1 8/10/02 efet iv curves 300 um dfet iv curves 300 um gfet iv curves 300 um
production process tqtrp advanced passives & mesfet foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 6 of 6; rev 2.1 8/10/02 applications support services ? tiling of gdsii stream files including pcm on 15 x 15 mm maximum tile size ? design rule check services ? layout versus schematic check services ? engineering services: ? packaging development ? on-wafer test development ? packaged parts ? thermal analysis ? yield enhancement ? part qualification services ? failure analysis manufacturing services ? mask making ? production 150 mm wafer fab ? wafer thinning ? wafer sawing ? substrate vias ? dc die sort testing ? rf on-wafer testing ? plastic packaging ? rf packaged part testing please contact your local triquint semiconductor representative or foundry services staff for additional information: e-mail: sales@triquint.com phone: (503) 615-9000 fax: (503) 615-8905 prototyping and development ? prototype development quickturn (pdq): ? shared mask set; ? run monthly; ? hot lot cycle; ? via and non-via options. ? prototype wafer option (pwo): ? customer-specific masks, customer schedule ? 2 wafers delivered ? hot lot cycle time ? with thinning and sawing; optional backside vias ? design sensitivity test (dst) wafer run ? yield analysis ? design sensitivity to process variation ? 14 wafer start; spread of vp values process qualification status ? tqtrp is a fully released qualified process ? reliability reports ? tqtrp process qualification ? TQTRX element qualification report (for fets) ? for more information on quality and reliability, contact triquint or visit www.tqs.com/manufacturing/qr/bdy_qr-pubs.htm. design tool status ? design manual available now ? device library of circuit elements: fets, diodes, thin film and implanted resistors, capacitors, inductors ? parameters for ?triquint?s own model? (tom) ? agilent ads design kit available now ? pspice models available q2?02 ? cadence layout library available now ? layout/verification kit for iceditors in q4?02 training ? gaas design classes: ? half day introduction; upon request ? four day technical training; fall & spring at triquint oregon facility ? for training schedules please visit: www.triquint.com/foundry
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